| 摘要 |
A method for fabricating a semiconductor device is provided to form a dummy gate electrode on an isolation layer in a logic region, thereby preventing loss of the isolation layer in the logic region in an etching process for forming a contact hole. An isolation layer(31) is formed in a substrate(30) to define an active region and a field region, and a gate conductive layer(33) is formed on the substrate comprising the isolation layer. A portion of the gate conductive layer is etched to form gate electrodes(35a,35c) on the substrate of the active region and to form a dummy gate electrode(35b) on the isolation layer. An insulation layer is formed to cover the gate electrode and the dummy gate electrode. A portion of the insulation layer is etched to form contact holes(42a,42b).
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