| 摘要 |
A saddle type transistor and a manufacturing method thereof are provided to obtain a high satisfaction in a device driving process, to prevent the generation of leakage current, and to improve the yield by preventing the generation of a short channel effect, satisfying a proper channel current and reducing coupling noises. A saddle type transistor includes a plurality of active regions, isolation layers(42) for defining the active regions, a plurality of gate lines and an etch stop layer. The plurality of gate lines cross the active region. A portion of the gate line is overlapped with one end portion of the active region. The other portion of the gate line is overlapped with the isolation layer. The etch stop layer is interposed between the gate line and the isolation layer.
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