发明名称 METHOD OF INSPECTING DEFECT IN A SEMICONDUCTOR DEVICE FABRICATING
摘要 A method for inspecting a defect in a semiconductor device fabricating process is provided to check out a gray level of the different region between a basic image and an inspection image. A basic image having a pattern with no defect is obtained(S11), and an inspection image having a pattern for inspecting whether a defect occurs actually is obtained(S13). The basic image is compared with the inspection image to identify a difference therebetween(S15). If there is a difference, a gray level is obtained(S17), and the maximum value and mean value of the gray level are obtained(S19). The maximum value of the gray level is subtracted by the meal value to determine occurrence of the defect(S21,S23).
申请公布号 KR20070064734(A) 申请公布日期 2007.06.22
申请号 KR20050125142 申请日期 2005.12.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JOUNG SOO;KIM, BONG SU;KIM, TAE YOUNG;LEE, EUN SOON;MYUNG, HYUN KYU;KIM, HYANG RAN;LEE, GEE JUN
分类号 H01L21/66 主分类号 H01L21/66
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