| 摘要 |
PROBLEM TO BE SOLVED: To make a gate length short and constant when an organic transistor is formed without using a photolithography. SOLUTION: After a gate electrode is formed in a substrate by using the substrate with a trench; the substrate is made hydrophilic, and then a gate insulating film is formed. A source and drain electrode is formed very near the gate insulating film by a difference of a surface energy between the gate insulating film and the substrate, and finally, a semiconductor layer is formed. COPYRIGHT: (C)2007,JPO&INPIT
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