| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent peeling of a first electrode layer including a high-reflective metal layer. <P>SOLUTION: In a group III nitride-based compound semiconductor optical element 1000, an electrode to be connected to a p-type layer 11 consists of a high-reflective first electrode layer 121 made of directly bonded rhodium (Rh), and a second electrode layer 122 formed thereon and made of nickel (Ni) having reactive performance with nitrogen. In the element 1000, a region where the second electrode layer 122 joins to an uppermost layer 12 of the group III nitride-based compound semiconductor exists. <P>COPYRIGHT: (C)2007,JPO&INPIT |
