| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of selectively forming a coating film. <P>SOLUTION: A first coating film 60 composed of a water repellent resin is selectively formed at a part on a semiconductor substrate 10, a coating agent is applied on the semiconductor substrate 10, and a second coating film 62 is selectively formed on the semiconductor substrate 10 excluding a region where the first coating film 60 is selectively formed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
