| 摘要 |
PROBLEM TO BE SOLVED: To provide a probe which can be adapted to a semiconductor device having a narrow interelectrode interval while considering over drive and its manufacturing method. SOLUTION: The probe comprises a contact part 110 to be in contact with an electrode 610 of the semiconductor device 600, a connection part 120 to be connected to the wiring pattern of a substrate 510 constituting a probe card 500, and a buckling part 130 provided between the contact part 220 and the connection part 120. The buckling part 130 is formed thinner than the contact part 220 and the connection part 120. The probe manufacturing method comprises a first plating process for plating the entire thin wire 200 made of a platinum group alloy such as a platinum-rhodium alloy with nickel or the like, a covering process for forming a cover 230 made of a material which is not plated on a part 130A corresponding to the buckling part 130, and a second plating process for plating the parts other than the part covered with the cover 230 with nickel or the like. COPYRIGHT: (C)2007,JPO&INPIT
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