| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an element forming region and raising driving ability, while raising electric separation between semiconductor elements, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes the element forming region 10A which is electrically separated from a semiconductor substrate 11 and divided into a plurality of island regions 10a arrayed in a gate widthwise direction, gate electrodes 15a, 15b formed over the plurality of island regions 10a, a p-type body region 17 formed in the upper part of the island region 10a, source regions 18s and a body draw-up region 19 formed in the upper part of the p-type body region 17, drain regions 18d formed in the upper part of the island region 10a, and in-contact wiring 22 and metal wiring 23 which are electrically connected to the drain regions 18d or source regions 18s and the body draw-up region 19. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
