发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
An object of the present invention is to provide a technique of reducing the leakage current of a drive circuit for driving a circuit that must retain a potential (or information) when in its standby state. A semiconductor integrated circuit device of the present invention includes a drive circuit for driving a circuit block. This drive circuit is made up of a double gate transistor with gates having different gate oxide film thicknesses. When the circuit block is in its standby state, the gate of the double gate transistor having a thinner gate oxide film is turned off and that having a thicker gate oxide film is turned on. This arrangement allows a reduction in the leakage currents of both the circuit block and the drive circuit while allowing the drive circuit to deliver or cut off power to the circuit block.
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申请公布号 |
US2007139072(A1) |
申请公布日期 |
2007.06.21 |
申请号 |
US20060567774 |
申请日期 |
2006.12.07 |
申请人 |
YAMAOKA MASANAO;KAWAHARA TAKAYUKI |
发明人 |
YAMAOKA MASANAO;KAWAHARA TAKAYUKI |
分类号 |
H03K19/003 |
主分类号 |
H03K19/003 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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