发明名称 |
Notch stop pulsing process for plasma processing system |
摘要 |
A method for etching a substrate having a silicon layer in a plasma processing chamber having a bottom electrode on which the substrate is disposed on during etching. The method includes performing a main etch step. The method also includes terminating main etch step when a predefined etch depth of at least 70 percent of thickness into silicon layer is achieved. The method further includes performing an overetch step. The overetch step including a first process step and a second process step. First process step is performed using a first bottom power level applied to bottom electrode. Second process step is performed using a second bottom power level applied to bottom electrode that is lower than first bottom power level. First process and second process steps are alternately performed a plurality of times. The method yet also includes terminating overetch step after silicon layer is etched through.
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申请公布号 |
US2007141847(A1) |
申请公布日期 |
2007.06.21 |
申请号 |
US20050305440 |
申请日期 |
2005.12.16 |
申请人 |
PANDHUMSOPORN TAMARAK;COFER ALFERD |
发明人 |
PANDHUMSOPORN TAMARAK;COFER ALFERD |
分类号 |
C03C25/68;C03C15/00;H01L21/302;H01L21/461 |
主分类号 |
C03C25/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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