| 摘要 |
<P>PROBLEM TO BE SOLVED: To stably obtain a good displacement characteristic by improving the crystallinity of a piezoelectric layer. <P>SOLUTION: The manufacturing method includes a process of forming a first ferroelectric film 71a on a lower electrode film 60, a process of forming a resist film on the first ferroelectric film and also forming the first ferroelectric film and the lower electrode film in a predetermined shape by etching with the resist film being made a mask, a process of removing the resist film by oxygen plasma ashing, a process of dipping a surface of the first ferroelectric film in a predetermined chemical liquid for a fixed time, a process of forming a remaining ferroelectric film, and a process of patterning an upper electrode film 80 and the piezoelectric layer 70 after forming the upper electrode film on the piezoelectric layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
