SYSTEM AND METHOD FOR IMPROVING MESA WIDTH IN A SEMICONDUCTOR DEVICE

摘要

A method for forming a memory device ( 100) is provided. A nitride layer (330) is formed over a substrate (310). The nitride layer (330) and the substrate (310) are etched to form a trench (510). The nitride layer (330) is trimmed on opposite sides of the trench (510) to widen the trench (510) within the nitride layer (330). The trench (510) is filled with an oxide material (810). The nitride layer (330) is stripped from the memory device (100), forming a mesa (1410) above the trench (510).