ENHANCED MULTI-BIT NON-VOLATILE MEMORY DEVICE WITH RESONANT TUNNEL BARRIER

摘要

A non-volatile memory cell uses a resonant tunnel barrier (600) that has an amorphous silicon and/or amorphous germanium layer (611) between two layers (610, 612)of either HfSiON or LaAlO<SUB>3</SUB>. A charge trapping layer (620) is formed over the tunnel barrier. A high-k charge blocking layer is formed over the charge trapping layer. A control gate (623) is formed over the charge blocking layer. Another embodiment forms a floating gate (620) over the tunnel barrier (600) that is comprised of two oxide layers (610, 612) with an amorphous layer (611) of silicon and/or germanium between the oxide layers.