发明名称 |
THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A TFT(Thin Film Transistor) array substrate and its manufacturing method are provided to enhance the flatness of the TFT array substrate and to improve the capacitance of a parasitic capacitor by using a main gate insulating layer made of organic material and a sub gate insulating pattern made of ferroelectric material. A gate pattern composed of a gate electrode(8) and a gate line(2) is formed on a substrate. A main gate insulating layer(45) made of organic material is formed on the resultant structure to cover the gate pattern. A semiconductor pattern is overlapped with the gate electrode. A source/drain pattern crosses a data line on the semiconductor pattern. The source/drain pattern includes a source electrode and a drain electrode. A TFT is formed at a crossing region between the gate line and the data line. A protection layer includes a contact hole for exposing the drain electrode of the TFT to the outside. A pixel electrode(18) contacts the drain electrode through the contact hole. A sub gate insulating pattern(52) made of ferroelectric material is overlapped with the gate pattern between the gate pattern and the main gate insulating layer. |
申请公布号 |
KR20070063734(A) |
申请公布日期 |
2007.06.20 |
申请号 |
KR20050123872 |
申请日期 |
2005.12.15 |
申请人 |
LG.PHILIPS LCD CO., LTD. |
发明人 |
HEO, JAE SEOK;CHAE, GEE SUNG |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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