发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
摘要 A TFT(Thin Film Transistor) array substrate and its manufacturing method are provided to enhance the flatness of the TFT array substrate and to improve the capacitance of a parasitic capacitor by using a main gate insulating layer made of organic material and a sub gate insulating pattern made of ferroelectric material. A gate pattern composed of a gate electrode(8) and a gate line(2) is formed on a substrate. A main gate insulating layer(45) made of organic material is formed on the resultant structure to cover the gate pattern. A semiconductor pattern is overlapped with the gate electrode. A source/drain pattern crosses a data line on the semiconductor pattern. The source/drain pattern includes a source electrode and a drain electrode. A TFT is formed at a crossing region between the gate line and the data line. A protection layer includes a contact hole for exposing the drain electrode of the TFT to the outside. A pixel electrode(18) contacts the drain electrode through the contact hole. A sub gate insulating pattern(52) made of ferroelectric material is overlapped with the gate pattern between the gate pattern and the main gate insulating layer.
申请公布号 KR20070063734(A) 申请公布日期 2007.06.20
申请号 KR20050123872 申请日期 2005.12.15
申请人 LG.PHILIPS LCD CO., LTD. 发明人 HEO, JAE SEOK;CHAE, GEE SUNG
分类号 H01L29/786 主分类号 H01L29/786
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