| 摘要 |
<p>To suppress spike voltages generated at turn-off operation, a semiconductor device according to the invention comprises a first region (3) composed of a first conductor, a second region (1, 2) composed of a second conductor formed on top of the first region (3), a third region (4) composed of the first conductor formed on top of the second region (1, 2) and a fourth region (5) composed of the second conductor formed on top of the third region (4). The second region (1, 2) comprises a depletion-layer forming auxiliary layer (1e, 1f) having a short lifetime and formed in the vicinity of the third region (4), a tail-current suppression layer (1b) having a shorter lifetime than that of the depletion-layer forming auxiliary layer (1e, 1f) and formed in the vicinity of the first region (3) and a depletion-layer forming suppression layer (1d, 1c) having a longer lifetime than that of the depletion-layer forming auxiliary layer (1e, 1f) and formed between the depletion-layer forming auxiliary layer 1le, 1f) and the tail-current suppression layer (1b).</p> |
