SINGLE-POLY PURE CMOS FLASH MEMORY DEVICE, METHOD FOR FABRICATING AND DRIVING THE SAME

摘要

A flash memory device, a method for manufacturing the same and a driving method thereof are provided to use only one high voltage switching circuit by a selective transistor and to build a control gate and a floating gate into a single layer. A flash memory device includes a select transistor and a memory transistor. The select transistor is used for selecting an aiming cell according to a predetermined signal, wherein the predetermined signal is applied to a gate(33) between a common source line and a bit line. The memory transistor is selected by the select transistor. The memory transistor is used for storing data. The memory transistor is composed of a floating gate(34) for storing the data and a first conductive type well for programming or erasing the data of the floating gate.