METHOD FOR FABRICATING SALICIDE OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a salicide layer of a semiconductor device is provided to simplify salicide processes by omitting a pre-cleaning process after a PAI(Pre-Amorphization Implant). A gate electrode(23) and source/drain regions(25) are selectively formed on a semiconductor substrate(21). A first pre-cleaning process is performed on the resultant structure. A metal film(26) is formed along an upper surface of the resultant structure. The surfaces of the gate electrode and the source/drain regions are amorphized by performing a PAI on the resultant structure. A metal salicide layer is formed on the resultant structure without a second pre-cleaning process by inducing the reaction of the metal film on the gate electrode and the source/drain regions.