| 摘要 |
A method for manufacturing a capacitor is provided to increase the area of the capacitor and to secure a high capacitance by preventing the generation of bridge between adjacent cells and increasing the CD(Critical Dimension) of a bottom of an opening portion for a lower electrode using a nitride spacer. An etch stop layer(24) and an insulating layer are sequentially formed on a semiconductor substrate(21) with a storage node contact plug. A first opening portion(27a) is formed on the resultant structure by etching partially the insulating layer. A nitride spacer(28a) is formed at sidewalls of the first opening portion. A second opening portion is formed on the resultant structure by etching the insulating layer using the nitride spacer as an etch barrier. A third opening portion is formed by extending the diameter of the second opening portion. The storage node contact plug is exposed to the outside by etching the etch stop layer through the third opening portion. A lower electrode is formed on the resultant structure to contact the storage node contact plug.
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