发明名称 Method of wafer bumping for enabling a stitch wire bond in the absence of discrete bump formation
摘要 A method of bumping a wafer for facilitating bonding of bond wires to elevate the bond location above the passivation layer. The wafer is bumped by disposing the wafer in at least one electroless bath having a nickel-containing solution therein, wherein bumps having a nickel-containing material are formed simultaneously on the exposed bond pads to an elevation sufficient to prevent damage to a passivation layer surrounding the bond pads by contact of a wire bonding capillary. A gold or palladium cap may optionally be formed over the nickel-containing material of the bumps. A method of forming a semiconductor device assembly is also disclosed.
申请公布号 US7232747(B2) 申请公布日期 2007.06.19
申请号 US20040928512 申请日期 2004.08.26
申请人 MICRON TECHNOLOGY, INC. 发明人 FARNWORTH WARREN M.;BROOKS JERRY M.
分类号 H01L21/44;H01L21/288;H01L21/60;H01L23/485 主分类号 H01L21/44
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