| 摘要 |
A method for manufacturing a semiconductor device is provided to block transmission of cracks generated in a first fuse to a second fuse by forming a contact plug for a crack blocking between the first fuse and the second fuse. A first interlayer dielectric(117) is formed on an upper portion of a semiconductor substrate(111) where a predetermined lower structure is formed. First and second plate layers(123a,123b) are formed on an upper portion of the first interlayer dielectric. A second interlayer dielectric(121) including first and second contact plugs(127a,127b) for a first metal wire is formed on an upper portion of the entire surface. First and second first metal wires(129a,129b) connected to the first and second contact plug for the first metal wire are formed. A third interlayer dielectric(125) including a contact plug(133) for a second metal wire and a contact plug(135) for a crack blocking is formed on an upper portion of the entire surface. A second metal wire(137) connected to the contact plug for the second metal wire and the contact plug for the crack blocking is formed. A first protective layer(139) and a second protective layer(141) are sequentially formed on an upper portion of the entire surface. The second protective layer, the first protective layer, and the second interlayer dielectric are etched by an etching process using a mask for defining a fuse open region until the first interlayer dielectric is exposed.
|
