| 摘要 |
<p>A method for correcting a mask layout is provided to correct exactly a mask pattern by defining the relation between a mask pattern error and a wafer pattern error using the difference between an aiming CD(Critical Dimension) and a real CD per each test mask. An aiming CD of plural patterns is determined in a mask. A plurality of test masks are manufactured. At this time, the aiming CD varies as much as a predetermined gap. A patterning process is performed on a wafer by using the plurality of test masks under variable exposure energy and focus conditions. A real CD is measured from the wafer patterns. An optimum CD variation of the mask patterns is determined by using the real CD and the aiming CD. An OPC(Optical Proximity Correction) is applied on the basis of the optimum CD variation.</p> |
