FILM FORMATION APPARATUS, METHOD FOR CLEANING THE SAME, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a method for cleaning a film formation apparatus capable of efficiently removing a high dielectric-constant material stuck in a heat treatment apparatus, and to provide the film formation apparatus and a program. SOLUTION: A control unit 100 of the heat treatment apparatus 1 heats inside of a reaction tube 2 to≥600°C, and supplies the cleaning gas containing hydorchloric acid from a treatment gas inlet pipe 17 to remove hafnium silicate by activated chlorine. COPYRIGHT: (C)2007,JPO&INPIT