MAGNETORESISTANCE EFFECT ELEMENT, MANUFACTURING METHOD THEREOF AND THIN FILM MAGNETIC HEAD

摘要

PROBLEM TO BE SOLVED: To attain a high MR ratio by a Heusler alloy layer to easily take a particular crystal structure when a layer adjacent to a spacer layer is the Heusler alloy layer. SOLUTION: The MR element 4 has a configuration comprising a pinned layer 43, the spacer layer 44, and a free layer 45 stacked in this order. A layer of the pinned layer 43 adjacent to the spacer layer 44 is formed of the Heusler alloy layer. A chemical compound 49 is provided to a boundary between the Heusler alloy layer and the spacer layer 44 dottedly in a sea island shape. The chemical compound 49 contains at least one kind of elements included in the Heusler alloy layer. COPYRIGHT: (C)2007,JPO&INPIT