| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the crystal orientation of each layer constituting a ferroelectric capacitor is properly controlled. SOLUTION: The semiconductor device includes a substrate 10, an insulating layer 12 provided on the substrate, a plug 34 penetrated through the insulating layer, a first barrier layer 42 provided on the plug, a metal oxide layer 44 provided on the first barrier layer 42, a second barrier layer 46 provided on the metal oxide layer and having a prescribed orientation, a first electrode 40 provided on the second barrier layer, a ferroelectric layer 50 provided on the first electrode, and a second electrode 60 provided on the ferroelectric layer. COPYRIGHT: (C)2007,JPO&INPIT
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