| 摘要 |
PROBLEM TO BE SOLVED: To surely dry large size wafers. SOLUTION: A drying chamber (2) is provided at the upper side of a dip tank (1) to and from which hot pure water is charged and discharged under the overflow condition. This drying chamber (2) has a heater (7) for heating the wafer which has been just pulled up from the dip tank (1) up to about 150°to 400°C, and an N<SB>2</SB>gas injection nozzle (9) for setting the inside of chamber to the N<SB>2</SB>atmosphere. Moreover, a vapor condensating means is provided just above the dip tank (1) in order to prevent the vapor generated from the overflow surface to rise within the drying chamber (2). The wafer pulled up from the overflow surface is heated up to higher temperature with the heater (7), is separated from water at the surface thereof with a surface tension, and is dried up in the state where no particle is adhered. COPYRIGHT: (C)2007,JPO&INPIT
|
