| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate equipped with high-crystallinity 3C-SiC (cubic silicon carbide) film, with the occurrence of crystal defects or cracks suppressed, due to misfit dislocations, and to provide its manufacturing method. SOLUTION: The semiconductor substrate 10 has a structure, having the 3C-SiC film provided on the surface of an MgO substrate which has a (100) plane, a (111) plane or a (110) plane on its surface. The semiconductor substrate 10 is manufactured through processes of forming an atomic step on the surface of the MgO substrate (S1), forming a thin Si film on a surface with the atomic step formed (S2), carbonizing the thin Si film 13 to form a thin 3C-SiC film 14a (S3), and making 3C-SiC grow hetero-epitaxially on the film 14a to form the 3C-SiC film 14 (S4). COPYRIGHT: (C)2007,JPO&INPIT
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