发明名称 |
Verfahren zur Herstellung von Kontaktstrukturen |
摘要 |
Contact structure production comprises two-dimensional photolithography on a silicon substrate. Contact structure production process comprises: (a) successively forming an auxiliary layer, a conductive layer and a photolacquer layer on a silicon substrate surface; (b) exposing the photolacquer layer with UV light through a photomask having a contact structure pattern; (c) developing the photolacquer layer to form openings; (d) depositing conductive material in the openings; (e) removing the photolacquer layer; (f) removing the auxiliary layer by etching to separate the contact structures from the substrate; and (g) etching the conductive layer from the contact structures. An Independent claim is also included for production of a contact mechanism with contact structures, comprising the above process. |
申请公布号 |
DE19957326(B4) |
申请公布日期 |
2007.06.14 |
申请号 |
DE1999157326 |
申请日期 |
1999.11.29 |
申请人 |
ADVANTEST CORP. |
发明人 |
KHOURY, THEODORE A.;JONES, MARK R.;FRAME, JAMES W. |
分类号 |
B81C1/00;G01R1/073;B81C3/00;G01R1/067;G01R3/00;G03F7/00;H01L21/28;H01L21/60;H01L21/66;H01L23/485;H01L23/50;H01R13/24;H05K3/20;H05K3/40 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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