发明名称 |
Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same |
摘要 |
In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
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申请公布号 |
US2007131976(A1) |
申请公布日期 |
2007.06.14 |
申请号 |
US20040577057 |
申请日期 |
2004.11.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD |
发明人 |
KANNO YOHEI;FUJII GEN |
分类号 |
G02F1/1368;H01L27/148;H01L21/288;H01L21/3205;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/74;H01L29/768;H01L29/786;H01L51/50;H05B33/14 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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