ELECTROSTATIC BREAKDOWN PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PROVIDED WITH SAME

摘要

A protection circuit is provided with a diode (D1) wherein an anode is connected to a gate signal input terminal and a cathode is connected to a gate of an output transistor (N1); a resistor (R1) wherein one end is connected to the gate signal input terminal and the other end is connected to a grounding terminal; and a pnp-type bipolar transistor (Qp1) wherein an emitter is connected to the gate of the output transistor (N1), a base is connected to one end of the resistor (R1) and the collector is connected to the grounding terminal. Thus, the open drain system output transistor is prevented from being unintentionally turned on due to application of an electrostatic pulse and the like, without requiring power supply, and the transistor can be protected from electrostatic breakdown.