SINGLE LEVEL CELL PROGRAMMING IN A MULTIPLE LEVEL CELL NON-VOLATILE MEMORY DEVICE

摘要

A multiple level cell memory array has an area that can be programmed as single level cells. The cells to be programmed are initially programmed with the desire data into either the least significant or most significant bit of the cell . A second programming operation then programs reinforcing data that adjusts the threshold level of the cell to the appropriate level for the desired data.