| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device capable of reducing difference in machining characteristics when a semiconductor manufacturing devices of the same specifications are used. SOLUTION: A silicon substrate 7 is mounted on a cathode electrode 14. An anode electrode 12 is placed separately from the cathode electrode 14 around the electrode 14. The anode electrode 12 includes protrusions 12a under the cathode electrode 14. This constitution can absorb and reduce a variation in plasma generation quantities among devices, an influence of a fluctuation in high frequency voltage between electrodes, and individual difference of a chamber for a physical quantity such as self bias voltage applied to the cathode electrode. COPYRIGHT: (C)2007,JPO&INPIT
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