| 摘要 |
A semiconductor device and a method for manufacturing the same are provided, in which the work function of a gate electrode being in contact with a gate insulating film can be efficiently adjusted while depletion of the gate electrode is suppressed. An SOI substrate is composed of a p-type silicon substrate, a buried oxide film, and a single crystal silicon layer. Furthermore, source and drain regions are provided in the single crystal silicon layer. In the single crystal silicon layer, the surface between the source and drain regions serves as a channel layer. A gate insulating film is formed on the single crystal silicon layer (the channel layer). On the gate insulating film is provided a polysilicon gate electrode composed of metal particles of TiN and a polysilicon film. The metal particles of TiN include particles being in contact with the gate insulating film and particles being out of contact with this film.
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