SILICON-BASED LIGHT EMITTING DIODE USING SIDE REFLECTING MIRROR

摘要

A silicon-based light emitting diode using a lateral reflector is provided to utilize effectively lateral reflecting light and to enhance light emitting efficiency by forming a reflector on an inner lateral surface of a substrate. A plurality of grooves are formed on a p type silicon substrate(100). A light emitting device layer(200) is formed by laminating an active layer(220), an n type doping layer(240), and a transparent electrode layer(260) on the p type silicon substrate within the groove. A metal electrode includes a lower metal electrode formed on a bottom surface of the p type silicon substrate, and an upper metal electrode formed on an upper surface of the light emitting device layer. A lateral surface of the groove is separated from the light emitting device layer to be utilized as a reflecting mirror.