PHASE CHANGE MEMORY DEVICE AND PROGRAM METHOD THEREOF

摘要

A phase change memory device and a program method thereof are provided to control set program time by controlling unit step time or the number of steps of a step down set current. A memory cell(110) has a phase change material. A write driver(140) provides a program current to the memory cell. If the program current is a step down set current, a set program control circuit(150) controls set program time of the step down set current. The set program control circuit controls unit step time of the step down set current through a period of a clock signal.