发明名称 On-DRAM termination resistance control circuit and method thereof
摘要 An on-DRAM termination resistance control circuit is capable of controlling resistance of an IC termination and minimizing area for the resistance control circuit by using a simplified circuit scheme. The on-DRAM termination resistance control circuit includes a push-up resistance adjusting unit, a pull-down resistance adjusting unit and resistance adjustment control unit. The push-up resistance adjusting unit adjusts resistances of a first and a second inner resistors based on an external reference resistor. The pull-down resistance adjusting unit adjusts a resistance of a third resistor based on the second inner resistor that is adjusted by adjustment of the push-up resistance control unit. The resistance adjustment control unit controls to alternatively repeat the operation of the push-up resistance adjusting unit and the pull-down resistance adjusting unit for a predetermined number of adjustment times.
申请公布号 US7230448(B2) 申请公布日期 2007.06.12
申请号 US20030737069 申请日期 2003.12.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOE SEONG-MIN
分类号 H03K17/16;H04L25/02 主分类号 H03K17/16
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