发明名称 OPTICALLY BOOSTED ELCTROABSORPTION DUPLEXER
摘要 An optically boosted electro-absorption duplexer is provided to realize a base station at low cost by performing monolithic integration through general photolithography, dry etching, and selective wet etching without using a selective area growth or butt-joint coupling method. An optically boosted electro-absorption duplexer includes a substrate(120E). A separation area(100) is formed with a first epitaxial layer composed of at least one material layer on the substrate(120E). The separation area(100) includes a first optical waveguide(100W). A photo-detecting modulating unit(200) is formed with a second epitaxial layer composed of at least one material layer on the first epitaxial layer. The photo-detecting modulating unit(200) detects and modulates an optical signal and includes a second optical waveguide(300W). An optical amplifying unit(300) is formed with a third epitaxial layer composed of at least one material layer on the second epitaxial layer. The optical amplifying unit(300) amplifies the optical signal and includes the second optical waveguide(300W) and a third optical waveguide(500W). The optical amplifying unit(300) and the photo-detecting modulating unit(200) are electrically separated from each other at the separation area(100). The optical amplifying unit(300) is formed on at least one side of the photo-detecting modulating unit(200).
申请公布号 KR20070059816(A) 申请公布日期 2007.06.12
申请号 KR20060014685 申请日期 2006.02.15
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KANG, YOUNG SHIK;KIM, JA HA;KIM, SUNG BOCK;CHUNG, YONG DUCK;CHOI, KWANG SEONG
分类号 H01S5/026 主分类号 H01S5/026
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