An optically boosted electro-absorption duplexer is provided to realize a base station at low cost by performing monolithic integration through general photolithography, dry etching, and selective wet etching without using a selective area growth or butt-joint coupling method. An optically boosted electro-absorption duplexer includes a substrate(120E). A separation area(100) is formed with a first epitaxial layer composed of at least one material layer on the substrate(120E). The separation area(100) includes a first optical waveguide(100W). A photo-detecting modulating unit(200) is formed with a second epitaxial layer composed of at least one material layer on the first epitaxial layer. The photo-detecting modulating unit(200) detects and modulates an optical signal and includes a second optical waveguide(300W). An optical amplifying unit(300) is formed with a third epitaxial layer composed of at least one material layer on the second epitaxial layer. The optical amplifying unit(300) amplifies the optical signal and includes the second optical waveguide(300W) and a third optical waveguide(500W). The optical amplifying unit(300) and the photo-detecting modulating unit(200) are electrically separated from each other at the separation area(100). The optical amplifying unit(300) is formed on at least one side of the photo-detecting modulating unit(200).
申请公布号
KR20070059816(A)
申请公布日期
2007.06.12
申请号
KR20060014685
申请日期
2006.02.15
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
KANG, YOUNG SHIK;KIM, JA HA;KIM, SUNG BOCK;CHUNG, YONG DUCK;CHOI, KWANG SEONG