| 发明名称 |
Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same |
| 摘要 |
The present invention relates to a capacitor having a hafnium oxide and aluminum oxide alloyed dielectric layer and a method for fabricating the same. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein a portion of the dielectric layer contacting one of the lower electrode and the upper electrode is formed by alloying hafnium oxide and aluminum oxide together.
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| 申请公布号 |
US7229888(B2) |
申请公布日期 |
2007.06.12 |
| 申请号 |
US20040819294 |
申请日期 |
2004.04.07 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIL DEOK-SIN;ROH JAE-SUNG;SOHN HYUN-CHUL |
| 分类号 |
C23C16/40;H01L21/20;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L27/04;H01L27/08;H01L27/105;H01L27/108;H01L29/76;H01L31/062 |
主分类号 |
C23C16/40 |
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