QUANTUM DOT LASER DIODE AND THE MANUFACTURING METHOD THEREOF
摘要
A quantum dot laser diode and a manufacturing method thereof are provided to acquire a good gain in a wanted oscillation wavelength without influence on a quantum dot uniformity by adapting a grating structure as a variable which has an influence on a quantum dot active layer. A manufacturing method of a quantum dot laser diode includes the steps of: forming a grating structure layer(120) having a plurality of gratings(130) on a substrate(110); forming a first lattice matching layer(140) on an upper part of the grating structure layer(120); forming at least one quantum dot layer(150) having at least one quantum dot on the first lattice matching layer(140); forming a second lattice matching layer(141) on the quantum dot layer(150); forming a clad layer(160) on the second lattice matching layer(141); and forming an ohmic contact layer(170) on the clad layer(160). One of an organic metal chemical deposition method, a molecular line deposition method, and a chemical line deposition method is used in the quantum dot forming step.
申请公布号
KR20070059923(A)
申请公布日期
2007.06.12
申请号
KR20060086028
申请日期
2006.09.07
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
KIM, JIN SOO;LEE, JIN HONG;HONG, SUNG UI;KWACK, HO SANG;CHOI, BYUNG SEOK;OH, DAE KON