| 摘要 |
The MOS type solid-state imaging device has plural pixels each of which comprises a photo-diode and a MOS transistor on a substrate. A gate electrode is formed on the channel dope layer formed in the surface of the p-type well layer. By ion implantation of n-type impurity ions via the gate electrode as the mask, the n-type source region and the drain region are formed in the region corresponding to the MOS transistor, and the n-type impurity region is also formed in the region corresponding to the photo-diode. In the well layer, a high impurity density region as a hole pocket is self-aligned to the gate electrode.
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