| 摘要 |
A semiconductor device having a thickness damage blocking layer for an input/output pad and a fuse is provided to make a fuse perform its own function by obtaining a pattern in which the thickness of an input/output pad and a fuse is not damaged. A first interlayer dielectric is formed in first and second regions on a substrate. A metal layer(230) is formed on the insulation layer. A second interlayer dielectric is formed on the metal layer. A pad vertically penetrates the second interlayer dielectric in the first region, electrically connected to the metal layer. An insulation passivation layer is formed on the pad and the second interlayer dielectric, made of a silicon oxide layer. A damage preventing layer is formed on the insulation passivation layer, made of a silicon nitride layer or a silicon oxide layer. A final passivation layer is formed on the damage preventing layer, made of a polyimide layer. An opening(280e,280f) is formed in a manner that the final passivation layer, the damage preventing layer and the insulation passivation layer expose the pad and the metal layer in the second region.
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