发明名称 |
Method to reduce photoresist pattern collapse by controlled surface microroughening |
摘要 |
A method is provided for preparing a substrate for photolithographic patterning. The method includes providing a substrate having at least an exposed rough surface layer including a polymeric material. The rough surface layer has surface features characterized by feature step height varying between about two percent and twenty percent of the minimum photolithographic half-pitch. A layer of photoresist material is then provided over the exposed rough surface layer and patterned.
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申请公布号 |
US7229936(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20040709406 |
申请日期 |
2004.05.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRODSKY COLIN J.;BUKOFSKY SCOTT J.;GOLDFARB DARIO L.;HALLE SCOTT D. |
分类号 |
H01L21/31;G03F7/09;H01L21/027;H01L21/311;H01L21/312;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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