| 摘要 |
Plasma is produced on a substrate (W) placed in an airtight processing container (1) by introducing a microwave to a radial line slot antenna (4). Such conditions are set that a pressure in the processing container is 7.32Pa through 8.65Pa, a microwave power is 2000W through 2300W, the distance (L1) between the substrate surface and the opposite surface of a material gas supply member (3) is 70mm through 105mm, and the distance (L2) between the substrate surface and a discharge gas supply member (2) is 100mm through 140mm. Under these conditions, a material gas consisting of cyclic C5F8 gas is activated based on the energy of the microwave. Hence, a film forming seed containing large numbers of C4F6 ions and radicals are obtained. Accordingly, a fluorine-added carbon film excellent in leak characteristics and thermal stability is formed.
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