| 摘要 |
A semiconductor processing method is provided to fabricate semiconductor wafers having reduced particle contamination using reduced particle generating silicon carbide. A method includes providing a silicon carbide article and modifying one or more surfaces of the silicon carbide article so that the article is generated 160 particles/dm^2 or less on a semiconductor wafer during wafer processing. The silicon carbide article is modified by etching, laser ablation, surface blasting, coating, oxidation, polishing, machining or combinations thereof. The etching is done with molten base. The silicon carbide article is treated with supercritical carbon dioxide. The silicon carbide is chosen from CVD silicon carbide, PVD silicon carbide, reaction bonded silicon carbide, sintered silicon carbide, hot pressed silicon carbide or foamed silicon carbide.
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