摘要 |
A semiconductor memory device for internal power measurement is provided to measure an internal power supply voltage supplied to a region apart from an internal power supply voltage generation part, by connecting a power supply voltage measurement pad and the region via a power supply line. In a semiconductor memory device performing a memory operation as an internal power supply voltage generated in an internal power supply voltage generation part(400) is supplied to an internal circuit, a power supply voltage measurement pad(210) measures the internal power supply voltage supplied to a specific part of the internal circuit. A fuse box(300) opens a fuse by using a fuse open mask. The internal power supply voltage supplied to the specific part of the internal circuit is measured through an internal power supply voltage measurement path which is formed to the power supply voltage measurement pad via a part corresponding to the open region of the fuse open mask of the fuse box from the specific part of the internal circuit, in a test operation.
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