发明名称 HEXAGONAL WURTZITE TYPE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND HEXAGONAL WURTZITE TYPE SINGLE CRYSTAL SUBSTRATE
摘要 A highly purified homogeneous hexagonal wurtzite type single crystal that is useful as substrates for various devices. There is provided a hexagonal wurtzite type compound single crystal represented by AX (A is a positive element while X is a negative element) obtained by crystal growth on at least m-plane from a columnar seed crystal, characterized in that the concentration dispersion of metal other than the positive element A whose concentration is in the range of 0.1 to 50 ppm is within 100%.
申请公布号 KR20070058574(A) 申请公布日期 2007.06.08
申请号 KR20077007445 申请日期 2005.09.21
申请人 TOKYO DENPA CO., LTD.;MITSUBISHI CHEMICAL CORPORATION 发明人 YOSHIOKA KENJI;YONEYAMA HIROSHI;MAEDA KATSUMI;NIIKURA IKUO;SATO MITSURU;ITO MASUMI;ORITO FUMIO
分类号 C30B29/16 主分类号 C30B29/16
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