发明名称 |
HEXAGONAL WURTZITE TYPE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND HEXAGONAL WURTZITE TYPE SINGLE CRYSTAL SUBSTRATE |
摘要 |
A highly purified homogeneous hexagonal wurtzite type single crystal that is useful as substrates for various devices. There is provided a hexagonal wurtzite type compound single crystal represented by AX (A is a positive element while X is a negative element) obtained by crystal growth on at least m-plane from a columnar seed crystal, characterized in that the concentration dispersion of metal other than the positive element A whose concentration is in the range of 0.1 to 50 ppm is within 100%.
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申请公布号 |
KR20070058574(A) |
申请公布日期 |
2007.06.08 |
申请号 |
KR20077007445 |
申请日期 |
2005.09.21 |
申请人 |
TOKYO DENPA CO., LTD.;MITSUBISHI CHEMICAL CORPORATION |
发明人 |
YOSHIOKA KENJI;YONEYAMA HIROSHI;MAEDA KATSUMI;NIIKURA IKUO;SATO MITSURU;ITO MASUMI;ORITO FUMIO |
分类号 |
C30B29/16 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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