发明名称 SUBSTRATE-TREATING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enable the entire inner wall of a gas output means, such as a nozzle, to be cleaned by cleaning gas. SOLUTION: A substrate-treating device comprises a reaction tube 37 for performing prescribed treatment to a substrate; a plurality of nozzles 43, 44, 45 for supplying reaction gas into the reaction tube; a piping that is connected to each of the plurality of nozzles, and is connected to the accumulation source of the reaction gas and cleaning gas; a valve provided between each of at least a plurality of nozzles of the piping and the accumulation source of each gas; a mass flow controller that is provided at the piping to control the flow rate of gas; and a controller 103 for controlling the mass flow controller so that the flow rate of the cleaning gas to be supplied to the plurality of nozzles differs, when cleaning the inside of the plurality of nozzles. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007142470(A) 申请公布日期 2007.06.07
申请号 JP20070040367 申请日期 2007.02.21
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YOSHINO AKIHITO
分类号 H01L21/205;C23C16/44 主分类号 H01L21/205
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