| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a ferroelectric memory in a stack structure in which the generation of the recess of a plug is suppressed, and reliability is improved. SOLUTION: This semiconductor device includes a substrate 10, an insulating layer 12 installed at the upper part of the substrate, a contact hole 20 installed in the insulating layer, a first plug 34 installed inside the contact hole with an upper face which is lower than the upper face of the insulating layer, a second plug 38 installed on the first plug inside the contact hole, a first electrode 42 installed at least at the upper part of the second plug, a ferroelectric layer 44 installed at the upper part of the first electrode, and a second electrode 46 installed at the upper part of the ferroelectric layer. The second plug includes a tungsten layer. COPYRIGHT: (C)2007,JPO&INPIT
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