| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film forming apparatus usable for producing a TFT (Thin Film Transistor) having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. SOLUTION: The thin film forming apparatus comprises: a film forming chamber 35 capable of maintaining a vacuum atmosphere in its inner space; a radio-frequency (RF) electrode 32 and a susceptor electrode 34 for generating an RF electric field to produce plasma; a bias power supply 33 for supplying respective RF powers of predetermined frequencies; a heating means (not shown); a gas supply means 37 for supplying a desired gas to the inner space of the film forming chamber 35 through a gas introducing pipe 36; a gas discharge means 38 for discharging the gas to maintain a desired pressure within the film forming chamber 35; and a control unit 39 for controlling various components. COPYRIGHT: (C)2007,JPO&INPIT
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