METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for manufacturing a semiconductor device wherein a silicon oxide film formed on a foundation is subjected to plasma nitridation using nitrogen which is activated by a plasma, and then subjected to thermal nitridation in a gaseous atmosphere including a compound containing a nitrogen atom, thereby forming a silicon oxynitride film having nitrogen concentration peaks near the surface of the silicon oxide film and near the interface of the silicon oxide film with the foundation.