发明名称 PHOTOTMASK DETERMINING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ITS PROGRAM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for rapidly and adequately performing correspondence when an exposure device is changed. <P>SOLUTION: The method comprises a process S1 for regulating the mask pattern of a photomask for a first exposure device; a process S2 for regulating a plurality of exposure conditions to be set in a second exposure device; a process S3 for predicting the projection image of the mask pattern to be projected on a substrate by the second exposure device concerning the respective exposure conditions; a process S4 for predicting the work pattern of a substrate surface, based on the projection image, concerning the respective exposure conditions; a process S7 for determining whether or not the work pattern satisfies a prescribed condition concerning the respective exposure conditions; and a process S11 for determining that the photomask is applied to the second exposure device, when the work pattern satisfies the prescribed condition concerning at least one exposure condition. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007142275(A) 申请公布日期 2007.06.07
申请号 JP20050336183 申请日期 2005.11.21
申请人 TOSHIBA CORP 发明人 KOTANI TOSHIYA;FUKUHARA KAZUYA;DEWA KYOKO
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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